Update History
MOSIS AMI 0.5um - Submicron Rules
SCMOSLib Pad Library
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26Oct2001
- Added Poly in Bond Pad to increase Poly density.
- Flip instance PADBIDIRHE in PADINC, and PADOUT for correct ports alignment.
- Correct DIUNBUF port.
- Updated transistor in schematic to match with layout for pads.
  
08Oct2001
- Updated Technology name to SCN3ME_SUBM, was SCN3M_SUBM.
- Updated large metal rules for Mettal1, Metal2, Metal3 to ignore all cases in DRC setup.

07Sep2001
- Updated PadBiDirHe, DRC errors (Large Metal rule) when abut to GndPad
 
31July2001
-Updated to current Mosis design rule for  AMI C5N - SCN3ME
-Fixed PadBiDirHe, PadAref, PadlessCorner,and PadVdd.

12July2000
-Removed Tanner CES and MOSIS Logos.
-Fixes to PadBiDirHe, PadAref, PadlessCorner,and PadVdd.

11July2000
- Change name from PadFC to PadlessCorner.
- SPR Pad Route Setup: Layers tab, changed Pad via layer to Via1

29June2000
- Fix PadIO and PadAref schematics for port names.
- Fix PadIO layout port from Via2 layer to Metal2 layer.

27June2000
- Fix Pad schematics for port names.

31Jan2000
- Added rule 27.6b
- Removed NW/Poly resistor

17Jan2000
-mAMIs05.tdb, mAMIs05DL.tdb, mAMIs05p: updated poly2 wire to include: not "High Res Implant"

05Oct99

-mAMIs05p.tdb: 	Rename mAMI05.xxx to mAMIs05.xxx
		DRC rules 8.5 (a,b,c,d) are disabled
		DRC rules 9.2 (b,c) are disabled

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Copyright (c) 2000 Tanner Research, Inc.  All rights reserved.

Tanner Research, Inc.
2650 East Foothill Blvd.
Pasadena, CA  91107 USA

Telephone: (626) 792-3000
Fax:       (626) 792-0300
e-mail:    ces@tanner.com
