#                  File: mAMIs05.xst
#			  For: Cross-section process definition file
#                Vendor: MOSIS:AMI
# Technology: 0.50U, N-Well (Lambda = 0.30um, Technology = SCN3M_SUBM) 
# Technology Setup File: mAMIs05.tdb
# Copyright (c)  1999
# Tanner Research, Inc.  All rights reserved
# ************************************************************************
#
#       L-Edit
#Step Layer Name Depth  Label	 [Angle[offset]]	Comment
#----------------------------------------------------------------------
gd   -             10		p-					#  1. Substrate
id  "Well X"        3		n-					#  2. n-Well
id   ActPSelNotPoly 0.9	p+		75		0	#  3. p-Implant
id   ActNSelNotPoly 0.9	n+		75		0	#  4. n-Implant
gd   -              0.6	-					#  5. Field Oxide
e    Active         0.6	-		45			#  6. 
gd   -              0.04	-					#  7. Gate Oxide
gd   Poly           0.4	-					#  8. Polysilicon
e    NotPoly        0.44	-		45			#  9.
gd   -              0.07	-		45			# 10. 2nd Gate Ox
gd   Poly2          0.4	-					# 11. 2nd Poly
e    NotPoly2       0.47  	-		60			# 12.
gd   -              0.9 	-					# 13. 
e   "P1/P2/Act Contact" 0.9 	-		60			# 14.
gd   Metal1         0.6    	-					# 15. Metal 1
e   "Not Metal1"    0.6    	-		45			# 16.
gd   -              1	   	-					# 17. 
e    Via1           1	   	-		60			# 18.
gd   Metal2         1.15   	-					# 19. Metal 2
e    "Not Metal2"   1.15   	-		45			# 20.
gd   -              1	   	-					# 21. 
e    Via2           1      	-		60			# 22.
gd   Metal3         1.3    	-					# 23. Metal 3
e    "Not Metal3"   1.3    	-		45			# 24.
gd   -              2      	-                           # 25. Overglass
e    Overglass      2      	-					# 26.
