#                  File: mAMIs05.ext
#                   For: Extract definition file
#                Vendor: MOSIS/AMI
#            Technology: 0.50U (Lambda = 0.30um) / N-well (SCN3M_SUBM) 
# Technology Setup and Test/Demo Suite: in file mAMIs05.tdb
# Copyright (c)  1999
# Tanner Research, Inc.  All rights reserved
#
# This file will work only with L-EDIT Version 7 and greater.
# ****************************************************************************

connect(n well wire, ndiff, ndiff)
connect(subs, pdiff, pdiff)
connect(allsubs, subs, subs)
connect(ndiff, Metal1, Active Contact)
connect(pdiff, Metal1, Active Contact)
connect(poly wire, Metal1, Poly Contact)
connect(poly2 wire, Metal1, Poly2 Contact)
connect(Metal1, Metal2, Via1)
connect(Metal2, Metal3, Via2)
connect(LPNP emitter, pdiff, LPNP emitter)
connect(LPNP collector, pdiff, LPNP collector)
connect(Metal1, Metal2, EXT_SHORT_M1M2)


# NMOS transistor with poly gate
device = MOSFET(
               RLAYER=ntran;  
               Drain=ndiff, WIDTH;
               Gate=poly wire;   
               Source=ndiff, WIDTH;
               Bulk=subs;
               MODEL=NMOS;
               )
# PMOS transistor with poly gate
device = MOSFET(
               RLAYER=ptran;
               Drain=pdiff, WIDTH;
               Gate=poly wire;
               Source=pdiff, WIDTH;
               Bulk=n well wire;
               MODEL=PMOS;
               )
#
# PNP transistor
device = BJT(
            RLAYER=LPNP ID;
            Collector=LPNP collector;
            Base=n well wire ;
            Emitter=LPNP emitter;
            Substrate=allsubs;
            MODEL=PNP;
            )
#
# NMOS capacitor
device = CAP(
            RLAYER=nmos capacitor;
            Plus=poly wire;
            Minus=ndiff;
            MODEL=;
            )
# PMOS capacitor
device = CAP(
            RLAYER=pmos capacitor;
            Plus=poly wire;
            Minus=pdiff;
            MODEL=;
            )
# Poly1-Poly2 capacitor
device = CAP(
            RLAYER=p2p1 capacitor, AREA;
            Plus=poly2 wire;
            Minus=poly wire;
            MODEL=;
            )
# Poly resistor
device = RES(
            RLAYER=poly resistor;
            Plus=poly wire, WIDTH;
            Minus=poly wire, WIDTH;
            MODEL=;
            )
# Poly2 resistor
device = RES(
            RLAYER=poly2 resistor;
            Plus=poly2 wire, WIDTH;
            Minus=poly2 wire, WIDTH;
            MODEL=;
            )
# Hi-Res Poly2 resistor
device = RES(
            RLAYER=HiRes resistor;
            Plus=poly2 wire, WIDTH;
            Minus=poly2 wire, WIDTH;
            MODEL=;
            )

# N Diffusion resistor
device = RES(
            RLAYER=ndiff resistor;
            Plus=ndiff, WIDTH;
            Minus=ndiff, WIDTH;
            MODEL=;
            )
# P Diffusion resistor
device = RES(
            RLAYER=pdiff resistor;
            Plus=pdiff, WIDTH;
            Minus=pdiff, WIDTH;
            MODEL=;
            )
# N Well resistor
device = RES(
            RLAYER=nwell resistor;
            Plus=n well wire, WIDTH;
            Minus=n well wire, WIDTH;
            MODEL=;
            )
# Bonding Area Capacitance
  device = CAP(
		RLAYER=Pad Comment;
            Plus=Metal1;
		Minus=allsubs;
		MODEL=;
		)

# Diodes PDIFF
  device = DIODE(
		RLAYER=diode pdiff;
		Plus=pdiff, WIDTH;
		Minus=n well wire, WIDTH;
		MODEL=Dpdiff;
		)IGNORE_SHORTS
  
# Diodes NDIFF
  device = DIODE(
		RLAYER=diode ndiff;
		Plus=subs, WIDTH;
		Minus=ndiff, WIDTH;
		MODEL=Dndiff;
		)IGNORE_SHORTS

# Lateral Diode
  device = DIODE(
		RLAYER=diode_lat;
		Plus=pdiff, WIDTH;
		Minus=ndiff, WIDTH;
		MODEL=D_lateral;
		)IGNORE_SHORTS

