# File:            mAMI150.ext
# For:             Extract definition file
# Vendor:          American Microsystems, Inc.
# Technology:      1.5U (Lambda = 0.8um) / N-well (SCNA)
# Technology File: mAMI150.tdb
# This file will work only with L-EDIT Version 7 and greater.
# Copyright (c)  2000
# Tanner Research, Inc.  All rights reserved
# ****************************************************************************

connect(n well wire, ndiff, ndiff)
connect(subs, pdiff, pdiff)
connect(allsubs, subs, subs)
connect(p base wire, pdiff, pdiff)
connect(npn, pdiff, pdiff)
connect(P Base, subs, P Base)
connect(ndiff, Metal1, Active Contact)
connect(pdiff, Metal1, Active Contact)
connect(poly wire, Metal1, Poly Contact)
connect(poly2 wire, Metal1, Poly2 Contact)
connect(Metal1, Metal2, Via)
connect(LPNP emitter, pdiff, LPNP emitter)
connect(LPNP collector, pdiff, LPNP collector)

# NMOS transistor with poly1 gate
device = MOSFET(
               RLAYER=ntran;  
               Drain=ndiff, AREA, PERIMETER;
               Gate=poly wire;   
               Source=ndiff, AREA, PERIMETER;
               Bulk=subs;
               MODEL=NMOS;
               )

# PMOS transistor with poly1 gate
device = MOSFET(
               RLAYER=ptran;
               Drain=pdiff, AREA, PERIMETER;
               Gate=poly wire;
               Source=pdiff, AREA, PERIMETER;
               Bulk=n well wire;
               MODEL=PMOS;
               )

# NMOS transistor with poly2 gate
device = MOSFET(
               RLAYER=ntran2;  
               Drain=ndiff, AREA, PERIMETER;
               Gate=poly2 wire;   
               Source=ndiff, AREA, PERIMETER;
               Bulk=subs;
               MODEL=NMOSp2;
               )

# PMOS transistor with poly2 gate
device = MOSFET(
               RLAYER=ptran2;
               Drain=pdiff, AREA, PERIMETER;
               Gate=poly2 wire;
               Source=pdiff, AREA, PERIMETER;
               Bulk=n well wire;
               MODEL=PMOSp2;
               )

# NPN transistor
device = BJT(
            RLAYER=npn, AREA;
            Collector=n well wire;
            Base=npn;
            Emitter=ndiff;
            Substrate=allsubs;
            MODEL=NPN;
            NominalArea = 1.0;
            )

# PNP transistor
device = BJT(
            RLAYER=LPNP ID, AREA;
            Collector=LPNP collector;
            Base=n well wire ;
            Emitter=LPNP emitter;
            Substrate=allsubs;
            MODEL=PNP;
            NominalArea = 1.0;
            )

# Poly1-Poly2 capacitor
device = CAP(
            RLAYER=Poly2-Poly1 Capacitor, AREA;
            Plus=poly wire;
            Minus=poly2 wire;
            MODEL=;
            )

# NMOS capacitor
device = CAP(
            RLAYER=NMOS Capacitor, AREA;
            Plus=poly wire;
            Minus=ndiff;
            MODEL=;
            )

# PMOS capacitor
device = CAP(
            RLAYER=PMOS Capacitor, AREA;
            Plus=poly wire;
            Minus=pdiff;
            MODEL=;
            )

# Poly resistor
device = RES(
            RLAYER=Poly Resistor;
            Plus=poly wire;
            Minus=poly wire;
            MODEL=;
            )

# Poly2 resistor
device = RES(
            RLAYER=Poly2 Resistor;
            Plus=poly2 wire;
            Minus=poly2 wire;
            MODEL=;
            )

# N Diffusion resistor
device = RES(
            RLAYER=N Diff Resistor;
            Plus=ndiff;
            Minus=ndiff;
            MODEL=;
            )

# P Diffusion resistor
device = RES(
            RLAYER=P Diff Resistor;
            Plus=pdiff;
            Minus=pdiff;
            MODEL=;
            )

# P Base resistor
device = RES(
            RLAYER=P Base Resistor;
            Plus=p base wire;
            Minus=p base wire;
            MODEL=;
            )

# N Well resistor
device = RES(
            RLAYER=N Well Resistor;
            Plus=n well wire;
            Minus=n well wire;
            MODEL=;
            )

# Bonding Area Capacitance
device = CAP(
            RLAYER=Pad Comment, AREA;
            Plus=Metal1;
            Minus=allsubs;
            MODEL=;
            )

# Diodes
device = DIODE(
              RLAYER=diode pdiff, AREA;
              Plus=pdiff;
              Minus=n well wire;
              MODEL=Dpdiff;
              NominalArea = 1.0;
              ) IGNORE_SHORTS

device = DIODE(
              RLAYER=diode ndiff, AREA;
              Plus=subs;
              Minus=ndiff;
              MODEL=Dndiff;
              NominalArea = 1.0;
              ) IGNORE_SHORTS

# Lateral Diode
device = DIODE(
              RLAYER=diode_lat, AREA;
              Plus=pdiff;
              Minus=ndiff;
              MODEL=D_lateral;
              NominalArea = 1.0;
              ) IGNORE_SHORTS

