#                  File: mAMIn12.xst
#					     For: Cross-section process definition file
#                Vendor: MOSIS:AMI
#   			 Technology: 1.2U N-Well (Lambda = 0.6um, Technology = SCNA) 
# Technology Setup File: mORBn12.tdb
# Copyright (c)  1991-93
# Tanner Research, Inc.  All rights reserved
# ******************************************************************* 
#       L-Edit
#Step Layer Name Depth	Label	[Angle[offset]]	Comment
#--------------------------------------------------------------------
gd   -             10		p-							#  1. Substrate
id  "Well X"        3		n-							#  2. n-Well
id   ActPSelNotPoly 0.9		p+		75		0			#  3. p-Implant
id   ActNSelNotPoly 0.9		n+		75		0			#  4. n-Implant
id  "P Base"        2		-							#  5. NPN Base Implant
gd   -              0.6		-							#  6. Field Oxide
e    Active         0.6		-		45					#  7. 
gd   -              0.1		-							#  8. Gate Oxide
gd   Poly           0.4		-							#  9. Polysilicon
e    NotPoly        0.44 	-		45					# 10.
gd   -              0.07	-		45					# 11. 2nd Gate Oxide
gd   Poly2          0.4	 	-							# 12. 2nd Polysilicon
e    NotPoly2       0.47  	-		60					# 13.
gd   -              0.9 	-							# 14. 
e   "P/P2/Act Contact" 0.9 -		60					# 15.
gd   Metal1         0.6	 	-							# 16. Metal 1
e   "Not Metal1"    0.6	 	-		45					# 17.
gd   -              1	 	-							# 18. 
e    Via            1	 	-		60					# 19.
gd   Metal2         1.15	-							# 20. Metal 2
e    "Not Metal2"   1.15 	-		45					# 21.
gd   -              2	 	-							# 22. Overglass
e    Overglass      2	 	-							# 23.
