Update History
MOSIS HP 0.5um - Submicron Rules
SCMOS Technology Setup
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21Sept2001
- Updated to current Mosis Technology Setup V8.0

17Jul2001
- Added layer Pselect|Nselect|Capwell, edit layer Not Select Act as Active not  Pselect|Nselect|Capwell.
- Added layer Act2
- Edited extraction file.

Release 25Aug2000
- Updated SPR design rule setup. 

Release 13Oct99
- Update DRC Rule 8.5, 9.2 
- Change recognition layer of devices to small case
- Added capacitances and resistances base on Mosis Parametric Test Results
  Run: N98R, Technology: SCN05H for Mosis HP 0.5 Submicron Process.

Release 24May99
- Add a new layer below the field act layer
  cap_well_act = cap well AND active
- Change rule 18.2 from Poly extends out of Cap Well Capacitor
  to Poly extends out of cap_well_act

									 
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Copyright (c) 2001 Tanner Research, Inc.  All rights reserved.

Tanner Research, Inc.
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Telephone: (626) 792-3000
Fax:       (626) 792-0300
e-mail:    ces@tanner.com
