#   	File: mHPs05.xst
#	For: Cross-section process definition file
#     Vendor: MOSIS:Hewlett Packard
#   	Technology: 0.5U, N-Well (Lambda = 0.3um, Technology = SCN3M_SUBM) 
# Technology Setup File: mHPs05.tdb
# Copyright (c)  1999
# Tanner Research, Inc.  All rights reserved
# ************************************************************************
#
#       L-Edit
#Step Layer Name Depth  Label	 [Angle[offset]]	Comment
#----------------------------------------------------------------------
gd   -             10		p-							#  1. Substrate
id  "Well X"        3		n-							#  2. n-Well
id   ActPSelNotPoly 0.9		p+		75		0			#  3. p-Implant
id   ActNSelNotPoly 0.9		n+		75		0			#  4. n-Implant
gd   -              0.6		-							#  5. Field Oxide
e    Active         0.6		-		45					#  6. 
gd   -              0.04	-							#  7. Gate Oxide
gd   Poly           0.4		-							#  8. Polysilicon
e    NotPoly        0.44	-		45					#  9.
gd   -              0.9 	-							# 10. 
e   "Poly/Act Contact" 0.9 	-		60					# 11.
gd   Metal1         0.6    	-							# 12. Metal 1
e   "Not Metal1"    0.6    	-		45					# 13.
gd   -              1	   	-							# 14. 
e    Via1           1	   	-		60					# 15.
gd   Metal2         1.15   	-							# 16. Metal 2
e    "Not Metal2"   1.15   	-		45					# 17.
gd   -              1	   	-							# 14. 
e    Via2           1      	-		60					# 15.
gd   Metal3         1.3    	-							# 16. Metal 3
e    "Not Metal3"   1.3    	-		45					# 17.
gd   -              2      	-							# 18. Overglass
e    Overglass      2      	-							# 19.
