#                  File: ORBTp20.xst
#					     For: Cross-section process definition file
#                Vendor: Orbit Semiconductor
#   			 Technology: 2.0U P-Well (Lambda = 1.0um, Technology= P20 2P2M)
# Technology Setup File: ORBTp20.tdb
# Copyright (c)  1991-93
# Tanner Research, Inc.  All rights reserved
# ******************************************************************* 
#       L-Edit
#Step Layer Name Depth	Label	[Angle[offset]]	Comment
#--------------------------------------------------------------------
gd   -             10		n-							#  1. Substrate
id  "Well X"        3		p-							#  2. p-Well
id   ActPSelNotPoly 0.9		p+		75		0			#  3. p-Implant
id   ActNSelNotPoly 0.9		n+		75		0			#  4. n-Implant
gd   -              0.6		-							#  5. Field Oxide
e    Active         0.6		-		45					#  6. 
gd   -              0.04	-							#  7. Gate Oxide
gd   Poly           0.4		-							#  8. Polysilicon
e    NotPoly        0.44 	-		45					#  9.
gd   -              0.07	-		45					# 10. 2nd Gate Oxide
gd   Poly2          0.4	 	-							# 11. 2nd Polysilicon
e    NotPoly2       0.47  	-		60					# 12.
gd   -              0.9 	-							# 13. 
e   "P/P2/Act Contact" 0.9 -		60					# 14.
gd   Metal1         0.6	 	-							# 15. Metal 1
e   "Not Metal1"    0.6	 	-		45					# 16.
gd   -              1	 	-							# 17. 
e    Via            1	 	-		60					# 18.
gd   Metal2         1.15	-							# 19. Metal 2
e    "Not Metal2"   1.15 	-		45					# 20.
gd   -              2	 	-							# 21. Overglass
e    Overglass      2	 	-							# 22.
